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PDF H15R1203 Data sheet ( Hoja de datos )
| Número de pieza | H15R1203 | |
| Descripción | Reverse conducting IGBT | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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 1. 1200V, 15A, IGBT - Infineon  Hay una vista previa y un enlace de descarga de H15R1203 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW15N120R3
Datasheet
IndustrialPowerControl
1 page  
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.40mA,VCE=VGE
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=15.0A
IHW15N120R3
min.
Value
typ.
max. Unit
1200 -
-V
-
-
1.48 1.70
1.70 -
V
- 1.80 -
-
-
1.55 1.75
1.70 -
V
- 1.80 -
5.1 5.8 6.4 V
- - 100.0 µA
- - 2500.0
- - 100 nA
- 13.9 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=960V,IC=15.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 1165 -
- 40 - pF
- 32 -
- 165.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
Turn-off energy
td(off)
tf
Eoff
Tvj=25°C,
VCC=600V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=14.6Ω,RG(off)=14.6Ω,
Lσ=180nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
min. typ. max. Unit
- 300 - ns
- 46 - ns
- 0.70 - mJ
5 Rev.2.4,2015-01-26
5 Page 
ResonantSwitchingSeries
IHW15N120R3
1.4
IC=30A, Tj=30°C
IC=30A, Tj=30°C
1.2
1.0
0.8
0.6
0.4
0.2
16
240V
960V
14
12
10
8
6
4
2
0.0
100
1000
dv/dt,VOLTAGESLOPE[V/µs]
1E+4
Figure 17. Typicalturnoffswitchingenergylossfor
softswitching
(indload,VCE=600V,VGE=15/0V,IC=15A,
RG=14,6Ω,testcircuitinFig.E)
0
0 25 50 75 100 125
QGE,GATECHARGE[nC]
Figure 18. Typicalgatecharge
(IC=15A)
150
175
1
1000
100
Cies
Coes
Cres
0.1
0.01
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
10
0 10 20 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 19. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
i: 1 2 3 4 5 6 7
ri[K/W]: 4.6E-3 0.1431 0.2097 0.2185
0.01204762 1.9E-3 2.1E-4
τi[s]: 2.4E-5 3.3E-4 3.1E-3 0.01636424 0.1753518 1.713276 4.662402
0.001
1E-6
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. IGBTtransientthermalimpedance
(D=tp/T)
11 Rev.2.4,2015-01-26
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet H15R1203.PDF ] | |
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