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Número de pieza | AM4825PE | |
Descripción | P-Channel 30-V (D-S) MOSFET | |
Fabricantes | Analog Power | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AM4825PE (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
AM4825PE
PRODUCT SUMMARY
VDS (V)
-30
rDS(on) m(Ω)
13 @ VGS = -10V
19 @ VGS = -4.5V
SOIC-8
Top View
ID (A)
-11.5
-9.3
S
S1
S2
S3
G4
8D
7D
G
6D
5
D
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-30
±25
-11.5
-9.3
±50
V
A
Continuous Source Current (Diode Conduction)a
IS -2.1 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
3.1
2.3
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
t <= 5 sec
Maximum Junction-to-Ambienta
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Maximum
25
50
Units
oC/W
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM4825PE_A
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet AM4825PE.PDF ] |
Número de pieza | Descripción | Fabricantes |
AM4825P | P-Channel 30-V (D-S) MOSFET | Analog Power |
AM4825PE | P-Channel 30-V (D-S) MOSFET | Analog Power |
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