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PDF TK80F08K3 Data sheet ( Hoja de datos )
| Número de pieza | TK80F08K3 | |
| Descripción | Swiching Regulator | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TK80F08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK80F08K3
Swiching Regulator
• Low drain-source ON-resistance: RDS (ON) = 3.4 mΩ (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 75 V)
• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
10.0 ± 0.3
9.5 ± 0.2
Unit: mm
0.4 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
1.1
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
(Note 4)
Storage temperature range (Note 4)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
75
75
±20
80
320
300
250
80
30
175
−55 to 175
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
0.76 ± 0.1
1.4 ± 0.1
2.54 ± 0.25
2.35 ± 0.1
2.34 ± 0.25
123
0.4 ± 0.1
1.GATE
12323... ..（D(SHSGDHROOREAEAUTAUAAIENRITTNSCSSEEIINNKK）)
8.0
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-10W1A
Weight: 1.07 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
2
Thermal resistance, channel to case
Rth (ch-c) 0.5 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 175°C.
1
Note 2: VDD = 25 V, Tch = 25°C, L = 58 μH, RG = 1 Ω, IAR = 80 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
3
Note 4: 175°C refers to AEC-Q101.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2010-02-02
Free Datasheet http://www.datasheet4u.com/
1 page  
RDS (ON) – Tc
10
Common source
VGS = 10 V
Pulse test
8
40
6
ID = 80 A
20
4
2
0
−80 −40
0
40
80 120 160
Case temperature Tc (°C)
TK80F08K3
1000
Common source
Tc = 25℃
Pulse test
300
IDR – VDS
10
100 5
3
30
10
1
VGS = 0
3
1
0 0.4 0.8 1.2 1.6 2.0
Drain-source voltage VDS (V)
100000
Capacitance – VDS
10000
Ciss
1000
Coss
Common source
VGS = 0 V
f = 1 MHz
100 Tc = 25°C
0.1
1
Crss
10 100
Drain-source voltage VDS (V)
Vth – Tc
5
Common source
VDS = 10 V
4 ID = 1 mA
Pulse test
3
2
1
0
−80 −40 0 40 80 120
Case temperature TC (°C)
160
PD − Tc
400
300
200
100
0
0 40 80 120 160 200
Case temperature Tc (°C)
Dynamic input/output characteristics
100 Common source
ID = 80 A
Tc = 25℃
80 Pulse test
20
16
VDS
60
40
20
15
30
12
VDD = 60 V
8
VGS
4
00
0 60 120 180 240
Total gate charge Qg (nC)
5 2010-02-02
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TK80F08K3.PDF ] | |
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