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Número de pieza | TK20P04M1 | |
Descripción | MOSFETs Silicon N-Channel MOS | |
Fabricantes | Freescale | |
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MOSFETs Silicon N-Channel MOS (U-MOS-H)
1. Applications
• DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) High-speed switching
(2) Low gate charge: QSW = 3.7 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 40 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
20 A
Drain current (pulsed)
(Note 1)
IDP
60
Power dissipation
(Tc = 25)
PD 27 W
Single-pulse avalanche energy
(Note 2)
EAS
10.4 mJ
Avalanche current
IAR 20 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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Free Datasheet http://www.datasheet4u.com/
1 page 8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
5/8
Fig. 8.6 RDS(ON) - Ta
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Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet TK20P04M1.PDF ] |
Número de pieza | Descripción | Fabricantes |
TK20P04M1 | MOSFETs Silicon N-Channel MOS | Freescale |
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