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PDF AON6926 Data sheet ( Hoja de datos )
| Número de pieza | AON6926 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AON6926
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6926 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is desgined to minimze switching
losses. The Q2 "Low Side" MOSFET is an SRFET™ that
features low RDS(ON) to reduce conduction losses as well as
an integrated Schottky diode with low QRR and Vf to reduce
switching losses. The AON6926 is well suited for use in
compact DC/DC converter applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
44A
<11mΩ
<14mΩ
Q2
30V
50A
<8.5mΩ
<12mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
BoBtotottmomViVeiwew
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
Current
TC=25°C
TC=100°C
ID
44 50
28 32
Pulsed Drain Current C
IDM 100 140
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
11
9
27
36
12
10
15
11
TC=25°C
Power Dissipation B TC=100°C
PD
31
12.5
35
14
TA=25°C
Power Dissipation A TA=70°C
PDSM
1.9
1.2
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.4
Typ Q2
24
50
3
Max Q1
35
67
4
Max Q2
29
60
3.6
Units
°C/W
°C/W
°C/W
Rev0 : July 2010
www.aosmd.com
Page 1 of 1
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6926
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=100°C
TA=125°C
TA=150°C
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
35
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=67°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001
0.001
0.1
10 1000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
0.0001
PD
Single Pulse
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: July 2010
www.aosmd.com
Page 6 of 10
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AON6926.PDF ] | |
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