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PDF AON6411 Data sheet ( Hoja de datos )
| Número de pieza | AON6411 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON6411
20V P-Channel MOSFET
General Description
Product Summary
The AON6411 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS= -10V)
RDS(ON) (at VGS= -10V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-2.5V)
100% UIS Tested
100% Rg Tested
-20
-85A
< 2.1mΩ
< 2.5mΩ
< 3.6mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
Avalanche energy L=0.1mH C
Power Dissipation B
TC=25°C
TC=100°C
IAS
EAS
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±12
-85
-67
-340
-47
-38
70
245
156
62.5
7.3
4.7
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
0.6
Max
17
55
0.8
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Jan. 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
200
TA=25°C
100
TA=150°C
10
TA=100°C
TA=125°C
150
100
50
1
1 10 100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
80
60
40
20
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.0001
0.01
1
100 10000
0
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Jan. 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON6411.PDF ] | |
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