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Número de pieza | AON6234 | |
Descripción | 40V N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON6234 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AON6234
40V N-Channel MOSFET
General Description
The AON6234 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
40V
85A
< 3.4mΩ
< 5.0mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
85
67
220
20
15
50
125
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
1.1
Max
17
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: August 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page AON6234
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
TA=25°C
TA=150°C
TA=100°C
100
80
60
40
10 TA=125°C
20
1
1 10 100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
80
60
40
20
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001
0.001
0.1
100 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: August 2011
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AON6234.PDF ] |
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