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PDF AP630P Data sheet ( Hoja de datos )
| Número de pieza | AP630P | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP630P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP630P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
Description
G
D
S
TO-220
BVDSS
RDS(ON)
ID
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP630P) is available for low-profile
applications.
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
200
± 30
9
5.7
36
74
0.59
240
9
7
-55 to 150
-55 to 150
200V
400mΩ
9A
D
S
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.7
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200219032
Free Datasheet http://www.datasheet4u.com/
1 page  
AP630P
16
I D =9A
14
12
10
V DS =80V
V DS =120V
V DS =160V
8
6
4
2
0
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
35
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 11 21 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T j =150 o C
1.00
T j =25 o C
0.10
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
4
3.5
3
2.5
2
-50 0 50 100 150
T j Junction Temperayure ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP630P.PDF ] | |
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