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Número de pieza | AUIRFZ44NL | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AUIRFZ44NL (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! AUTOMOTIVE GRADE
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D
G
S
D
PD-96391A
AUIRFZ44NS
AUIRFZ44NL
HEXFET® Power MOSFET
V(BR)DSS
55V
RDS(on) max. 17.5mΩ
ID 49A
D
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
S
G
D2Pak
AUIRFZ44NS
S
GD
TO-262
AUIRFZ44NL
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally Limited)
EAS (tested)
IAR
EAR
dv/dt
Gate-to-Source Voltage
hSingle Pulse Avalanche Energy
gSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Max.
49
35
160
3.8
94
0.63
±20
150
530
25
9.4
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.5
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet h0t8tp/:2//9w/w1w1.datasheet4u.com/
1 page 2500
2000
Ciss
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
1500
1000
500
Coss
Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
AUIRFZ44NS/L
20 ID = 25A
16
VDS = 44V
VDS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40 50 60 70
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
10 TJ = 25°C
1 VGS = 0V A
0.5 1.0 1.5 2.0 2.5 3.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 10μs
100μs
10
1ms
TC = 25°C
STJing=le
175°C
Pulse
1
10ms
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
AUIRFZ44NS/L
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet AUIRFZ44NL.PDF ] |
Número de pieza | Descripción | Fabricantes |
AUIRFZ44NL | Power MOSFET ( Transistor ) | International Rectifier |
AUIRFZ44NS | Power MOSFET ( Transistor ) | International Rectifier |
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