DataSheet.es    


PDF AUIRFR3607 Data sheet ( Hoja de datos )

Número de pieza AUIRFR3607
Descripción Advanced Process Technology
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de AUIRFR3607 (archivo pdf) en la parte inferior de esta página.


Total 13 Páginas

No Preview Available ! AUIRFR3607 Hoja de datos, Descripción, Manual

AUTOMOTIVE GRADE
PD - 96376
AUIRFR3607
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
G
AUIRFU3607
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S ID (Package Limited)
75V
7.34mΩ
c9.0mΩ
80A
56A
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
D
S
G
D-Pak
AUIRFR3607
S
D
G
I-Pak
AUIRFU3607
GDS
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
eGate-to-Source Voltage
Single Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
80™
56™
56
310
140
0.96
± 20
120
46
14
27
-55 to + 175
300(1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
kRθJC
Junction-to-Case
jRθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://ww0w6.d/a2t2as/h1e1et4u.com/

1 page




AUIRFR3607 pdf
1000
100
TJ = 175°C
10
1
TJ = 25°C
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
80
70 Limited By Package
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
1.20
1.00
0.80
0.60
0.40
0.20
0.00
-10 0 10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
1000
100
AUIRFR/U3607
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10 10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
Id = 5mA
95
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
500
450 ID
TOP 5.6A
400 11A
350 BOTTOM 46A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
Free Datasheet http://www.datasheet4u.com/

5 Page





AUIRFR3607 arduino
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
AUIRFR/U3607
TRR TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/

11 Page







PáginasTotal 13 Páginas
PDF Descargar[ Datasheet AUIRFR3607.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
AUIRFR3607Advanced Process TechnologyInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar