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Número de pieza | APM2701CG | |
Descripción | Dual Enhancement Mode MOSFET | |
Fabricantes | Anpec | |
Logotipo | ||
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Dual Enhancement Mode MOSFET (N and P-Channel)
Features
Pin Description
• N-Channel
20V/3A,
RDS(ON)=50mΩ(typ.) @ VGS=4.5V
RDS(ON)=90mΩ(typ.)
@
V =2.5V
GS
• P-Channel
-20V/-1.5A,
RDS(ON)=145mΩ(typ.) @ VGS=-4.5V
RDS(ON)=180mΩ(typ.) @ VGS=-2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Top View
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
JSOT-6
Top View of JSOT-6
(6)D1
(2)S2
Applications
(1)G1
(3)G2
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(5)S1
N-Channel MOSFET
(4)D2
P-Channel MOSFET
Ordering and Marking Information
APM2701
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2701CG : M71X
Package Code
CG : JSOT-6
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.com/
1 page APM2701CG
Typical Characteristics (Cont.)
Output Characteristics
12
V = 3,4,5,6,7,8,9,10V
GS
10 2.5V
8
6
2V
4
2
1.5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
0.14
0.12
V =2.5V
GS
0.10
0.08
0.06
0.04
V =4.5V
GS
0.02
0.00
0
2468
ID - Drain Current (A)
10
Transfer Characteristics
10
9
8
7
6
5
4
T =125oC
3j
2 T =25oC
j
1
T =-55oC
j
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
I
DS
=250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
5
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.com/
5 Page APM2701CG
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
TP
TL
Tsmax
tp
Ramp-up
tL
Critical Zone
TL to TP
T s m in
ts
Preheat
Ramp-down
25 t 25 °C to Peak
Classificatin Reflow Profiles
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
See table 1
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
See table 2
Time within 5°C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6°C/second max.
6°C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
11
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet APM2701CG.PDF ] |
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