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PDF IXGP7N60CD1 Data sheet ( Hoja de datos )
| Número de pieza | IXGP7N60CD1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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HiPerFASTTM IGBT
with Diode
IXGA 7N60CD1
IXGP 7N60CD1
LightspeedTM Series
VCES
IC25
VCE(sat)typ
tfi
= 600 V
= 14 A
= 2.0 V
= 45 ns
PreliminaryData
Symbol
Test Conditions
V
CES
VCGR
T = 25°C to 150°C
J
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
V
GEM
Continuous
Transient
IC25
IC90
ICM
SSOA
(RBSOA)
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
V
GE
=
15
V,
T=
VJ
125°C, R =
G
22
Ω
Clamped inductive load, L = 300 µH
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque, (TO-220)
M3
M3.5
Weight
TO-220
TO-263
Maximum Ratings
600
600
±20
±30
14
7
30
I = 14
CM
@ 0.8 VCES
75
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4g
2g
Symbol
BVCES
V
GE(th)
I
CES
IGES
V
CE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
I
C
=
250
µA,
V
CE
=
V
GE
V = 0.8 • V
CE CES
VGE = 0 V
T = 25°C
J
TJ = 125°C
VCE = 0 V, VGE = ±20 V
I = I , V = 15 V
C C90 GE
600 V
2.5 5.5 V
100 µA
750 µA
±100 nA
2.0 2.5 V
TO-220AB (IXGP)
GCE
TO-263 AA (IXGA)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
• High frequency IGBT
• High current handling capability
• HiPerFASTTM HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Suitable for surface mounting
• Very low switching losses for high
frequency applications
© 2003 IXYS All rights reserved
DS98720A(01/03)
Free Datasheet http://www.datasheet4u.com/
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