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PDF AP6680CGYT-HF Data sheet ( Hoja de datos )
| Número de pieza | AP6680CGYT-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP6680CGYT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP6680C series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
BVDSS
RDS(ON)
ID
30V
9mΩ
15A
D
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
15
12
50
3.13
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
5
40
Unit
℃/W
℃/W
1
201206211
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP6680CGYT-HF.PDF ] | |
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