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PDF AP30G120ASW Data sheet ( Hoja de datos )
| Número de pieza | AP30G120ASW | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP30G120ASW
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant
G
C
E
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGE Gate-Emitter Voltage
IC@TC=25℃
Continuous Collector Current
IC@TC=100℃
ICM
Continuous Collector Current
Pulsed Collector Current1
IF@TC=100℃
Diode Continunous Forward Current
IFM Diode Pulse Forward Current
PD@TC=25℃
Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
TL Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
VCES
IC
G
Rating
1200
+30
60
30
120
6
40
208
-55 to 150
-55 to 150
300
1200V
30A
C
E
Units
V
V
A
A
A
A
A
W
℃
℃
℃
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c(IGBT) Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value
0.6
2
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
IGES
ICES
VCE(sat)
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
VGE=+30V, VCE=0V
VCE=1200V, VGE=0V
VGE=15V, IC=30A
VGE=15V, IC=60A
--
--
- 2.9
- 3.7
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
VCE=VGE, IC=250uA
IC=30A
VCC=500V
VGE=15V
VCC=600V,
Ic=30A,
VGE=15V,
RG=5Ω,
Inductive Load
3-
- 63
- 12
- 32
- 40
- 45
- 125
- 430
- 1.3
Eoff Turn-Off Switching Loss
Cies Input Capacitance
Coes Output Capacitance
VGE=0V
VCE=30V
- 3.1
- 1400
- 120
Cres Reverse Transfer Capacitance
f=1.0MHz
- 15
Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified)
VF Forward Voltage
VF Forward Voltage
trr Reverse Recovery Time
IF=6A
IF=20A
IF=10A
- 2.6
--
- 54
Qrr Reverse Recovery Charge
di/dt = 100 A/µs
- 138
Max.
+500
1
3.6
-
7
100
-
-
-
-
-
860
-
-
2240
-
-
3
4
-
-
Units
nA
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
V
V
ns
nC
Data and specifications subject to change without notice
1
201107182
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP30G120ASW.PDF ] | |
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