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PDF IRFML8244TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFML8244TRPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS Max
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
25
± 20
24
41
V
V
m
m
PD - 97587A
IRFML8244TRPbF
HEXFET® Power MOSFET
*
6
'
Micro3TM (SOT-23)
IRFML8244TRPbF
Application(s)
Load/ System Switch
Features and Benefits
Features
Low RDS(on) ( 24m)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
results in
Benefits
Lower switching losses
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRJA Junction-to-Ambient
fRJA Junction-to-Ambient (t<10s)
Max.
25
5.8
4.6
24
1.25
0.80
0.01
± 20
-55 to + 150
Typ.
–––
–––
Max.
100
99
Units
V
A
W
W/°C
V
°C
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
www.irf.com
1
02/29/12
Free Datasheet http://www.datasheet4u.com/
1 page  
IRFML8244TRPbF
6
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
1000
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width µs
Duty Factor
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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| Páginas | Total 10 Páginas | |
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