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PDF PMEG6045ETP Data sheet ( Hoja de datos )
| Número de pieza | PMEG6045ETP | |
| Descripción | Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG6045ETP
High-temperature 60 V, 4.5 A Schottky barrier rectifier
4 March 2013
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 4.5 A
• Reverse voltage: VR ≤ 60 V
• Low forward voltage
• High power capability due to clip-bonding technology
• Small and flat lead SMD plastic package
• AEC-Q101 qualified
• High temperature Tj ≤ 175 °C
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
• Low power consumption application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tsp ≤ 155 °C;
square wave
Tj = 25 °C
IF = 4.5 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
Tj = 25 °C; VR = 60 V; pulsed
Min Typ Max Unit
- - 4.5 A
- - 60 V
- 460 530 mV
- 115 400 µA
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NXP Semiconductors
PMEG6045ETP
High-temperature 60 V, 4.5 A Schottky barrier rectifier
Symbol
IR
Cd
trr
VFRM
Parameter
Conditions
IF = 1.5 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
IF = 4 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
IF = 4.5 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
reverse current
VR = 5 V; Tj = 25 °C; pulsed
VR = 10 V; Tj = 25 °C; pulsed
VR = 30 V; Tj = 25 °C; pulsed
VR = 60 V; Tj = 25 °C; pulsed
VR = 10 V; Tj = 125 °C; pulsed
VR = 60 V; Tj = 125 °C; pulsed
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
peak forward recovery IF = 1 A; dIF/dt = 40 A/µs; Tj = 25 °C
voltage
Min Typ Max Unit
- 375 - mV
- 390 440 mV
- 420 475 mV
- 450 510 mV
- 460 530 mV
- 7 20 µA
- 9 40 µA
- 20 80 µA
- 115 400 µA
- 9 - mA
- 70 300 mA
- 575 - pF
- 200 - pF
- 20 - ns
- 385 - mV
PMEG6045ETP
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 March 2013
© NXP B.V. 2013. All rights reserved
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NXP Semiconductors
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMEG6045ETP v.1 20130304
PMEG6045ETP
High-temperature 60 V, 4.5 A Schottky barrier rectifier
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMEG6045ETP
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 March 2013
© NXP B.V. 2013. All rights reserved
11 / 14
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