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PDF AUIRLZ44Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRLZ44Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97682
AUTOMOTIVE GRADE
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to
Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
G
AUIRLZ44Z
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) typ. 11mΩ
max. 13.5mΩ
S ID
51A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
G
Gate
D
DS
G
TO-220AB
AUIRLZ44Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS(Thermally Limited) Single Pulse Avalanche Energy
EAS (tested )
IAR
EAR
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
iJunction-to-Case
Parameter
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Max.
51
36
204
80
0.53
± 16
78
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
Max.
1.87
–––
62
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datashe0e6t/h1t0tp/1:/1/www.datasheet4u.com/
1 page  
AUIRLZ44Z
2500
2000
1500
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
12
ID= 31A
10
8
VDS= 44V
VDS= 28V
VDS= 11V
6
4
2
0
0 10 20 30 40
QG Total Gate Charge (nC)
50
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
ance
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.2
VGS = 0V
0.6 1.0 1.4
VSD, Source-to-Drain Voltage (V)
1.8
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
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5 Page 
AUIRLZ44Z
Ordering Information
Base part
number
Package Type
AUIRLZ44Z
TO-220
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
AUIRLZ44Z
www.irf.com
11
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRLZ44Z.PDF ] | |
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