|
|
Número de pieza | AUIRLSL4030 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AUIRLSL4030 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! AUTOMOTIVE GRADE
PD - 96406B
AUIRLS4030
Features
AUIRLSL4030
l Optimized for Logic Level Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ. 3.4mΩ
G max. 4.3mΩ
S ID
180A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
GDS
D2Pak
AUIRLS4030
GDS
TO-262
AUIRLSL4030
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
dGate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
ikRθJC
Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount) , D2Pak
Max.
180
130
730
370
2.5
± 16
305
See Fig. 14, 15, 22a, 22b,
21
-55 to + 175
300
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da1t1a/s1h7e/e1t14u.com/
1 page 1000
TJ = 175°C
100
TJ = 25°C
10
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
200
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
175
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-20 0 20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
AUIRLS/SL4030
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
10msec
10 DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
1msec
10 100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP 17A
40A
BOTTOM 110A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
Free Datasheet http://www.datasheet4u.com/
5 Page AUIRLS/SL4030
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet AUIRLSL4030.PDF ] |
Número de pieza | Descripción | Fabricantes |
AUIRLSL4030 | Power MOSFET ( Transistor ) | Infineon |
AUIRLSL4030 | Power MOSFET ( Transistor ) | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |