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PDF AUIRLR3410 Data sheet ( Hoja de datos )
| Número de pieza | AUIRLR3410 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97491
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
G
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the
designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of
other applications.
AUIRLR3410
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max.
S ID
100V
105mΩ
17A
G
Gate
D
S
G
D-Pak
AUIRLR3410
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dgSingle Pulse Avalanche Energy (Thermally Limited)
ÃgAvalanche Current
gRepetitive Avalanche Energy
ePeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
jRθJC Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
Max.
17
12
60
79
0.53
± 16
150
9.0
7.9
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
04/12/2010
Free Datasheet http://www.datasheet4u.com/
1 page  
AUIRLR3410
1400
1200
1000
V
C
GS
iss
=
=
0V,
Cgs
f = 1MHz
+ Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
600
Coss
400
Crss
200
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15 I D = 9.0A
12
VDS = 80V
VDS = 50V
VDS = 20V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 175°C
10
TJ = 25°C
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
100
10µs
10 100µs
TTCJ
= 25°C
= 175°C
Single Pulse
1
1ms
10ms
1 10 100
VDS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
AUIRLR3410
Ordering Information
Base part
AUIRLR3410
Package Type
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
Complete Part Number
AUIRLR3410
AUIRLR3410TR
AUIRLR3410TRL
AUIRLR3410TRR
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRLR3410.PDF ] | |
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