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PDF AUIRF7416Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7416Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97642
Features
l Advanced Process Technology
l Low On-Resistance
l P-Channel MOSFET
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUIRF7416Q
HEXFET® Power MOSFET
S1
V8
A
D
(BR)DSS
S2
S3
7D
6 D RDS(on) max.
G4
5D
Top View
ID
-30V
0.02Ω
-10A
Description
Specifically designed for Automotive applications, this cel-
lular design of HEXFET® Power MOSFETs utilizes the lat-
est processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automo-
tive and a wide variety of other applications.
SO-8
AUIRF7416Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifica-
tions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature
(TA) is 25°C, unless otherwise specified.
Parameter
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
PD @TA = 25°C
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ePeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRθJA Junction-to-Ambient
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Max.
50
Units
A
W
mW/°C
V
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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1 page  
AUIRF7416Q
4000
3000
2000
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
Coss
1000
Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 I D = -5.6A
16
12
VDS = -24V
VDS = -15V
8
4
FOR TEST CIRCUIT
0
SEE FIGURE 9
A
0 20 40 60 80 100
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100us
10
1ms
TA
TJ
=
=
25 °C
150 ° C
Single Pulse
1
0.1
1
10ms
10 100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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5 Page 
AUIRF7416Q
Ordering Information
Base part
number
Package Type
AUIRF7416Q
SO-8
Standard Pack
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
2500
AUIRF7416Q
AUIRF7416QTR
www.irf.com
11
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7416Q.PDF ] | |
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