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PDF AUIRF7343Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7343Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE MOSFET
PD - 96343B
AUIRF7343Q
Features
l Advanced Planar Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified*
l Lead-Free, RoHS Compliant
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
V(BR)DSS
55V -55V
RDS(on) typ. 0.043Ω 0.095Ω
max. 0.050Ω 0.105Ω
ID 4.7A -3.4A
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
eSingle Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJA Junction-to-Ambient
Max.
N-Channel
55
4.7
3.8
38
2.0
1.3
72
4.7
0.20
± 20
5.0
P-Channel
-55
-3.4
-2.7
-27
114
-3.4
-5.0
-55 to + 150
Units
V
A
W
mJ
A
mJ
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.d0a9ta/2s2he/1e1t4u.com/
1 page  
N-Channel
AUIRF7343Q
2.5 ID = 4.7A
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.12
0.10
0.08
I D = 4.7A
0.06
0.04
0
2468
VGS , Gate-to-Source Voltage (V)
A
10
Fig 7. Typical On-Resistance Vs. Gate
Voltage
0.120
0.100
0.080
0.060
0.040
0
VGS = 4.5V
VGS = 10V
10 20 30
I D , Drain Current (A)
40
Fig 6. Typical On-Resistance Vs. Drain
Current
200 ID
TOP
2.1A
3.8A
160 BOTTOM 4.7A
120
80
40
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
AUIRF7343Q
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
14.40 ( .566 )
12.40 ( .488 )
www.irf.com
11
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11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7343Q.PDF ] | |
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