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PDF AUIRF7316Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7316Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96365B
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free, RoHS Compliant
AUIRF7316Q
HEXFET® Power MOSFET
S1 1
8 D1 V(BR)DSS
-30V
G1 2
7 D1 RDS(on) typ. 0.042Ω
S2 3
G2 4
6 D2
5 D2
max. 0.058Ω
Top View
ID
-4.9A
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Thermal Resistance
RθJA
Parameter
Drain-Source Voltage
gContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
cPulsed Drain Current
Continuous Source Current (Diode Conduction)
gPower Dissipation
gPower Dissipation
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Parameter
gJunction-to-Ambient
Max.
-30
-4.9
-3.9
-30
-2.5
2.0
1.3
± 20
140
-2.8
0.20
-5.0
-55 to + 150
Max.
62.5
Units
V
A
W
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://w0w8w/2.d4a/1ta1sheet4u.com/
1 page  
AUIRF7316Q
2.0 ID =-4.9A
1.5
1.0
0.5
0.0 VGS =-10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.6
0.5
0.4
0.3
VGS = -4.5V
0.2
0.1
0.0
0
VGS = -10V
10 20
-ID , Drain Current (A)
A
30
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
0.12
0.08 I D = -4.9A
0.04
0.00
0
3 6 9 12
-VGS , Gate -to-Source Voltage (V)
A
15
Fig 7. Typical On-Resistance Vs. Gate
Voltage
300 ID
TOP
-1.3A
250 -2.2A
BOTTOM -2.8A
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7316Q.PDF ] | |
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