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Número de pieza | AUIRF7309Q | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AUIRF7309Q (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! AUTOMOTIVE GRADE
PD - 97655A
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual N and P Channel MOSFET
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
AUIRF7309Q
HEXFET® Power MOSFET
N-CH P-CH
V(BR)DSS
30V -30V
RDS(on) max. 0.05Ω 0.10Ω
ID 4.7A -3.5A
SO-8
AUIRF7309Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fLinear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJA Junction-to-Ambient (PCB Mount, steady state)
Max.
N-Channel
P-Channel
4.7 -3.5
4 -3.0
3.2 -2.4
16 -12
1.4
0.011
± 20
6.9 -6.0
-55 to + 150
Typ.
–––
Max.
90
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http:/0/w6/w2w3/.1d1atasheet4u.com/
1 page AUIRF7309Q
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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F7309Q
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet AUIRF7309Q.PDF ] |
Número de pieza | Descripción | Fabricantes |
AUIRF7309Q | Dual N and P Channel MOSFET | Infineon |
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