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PDF SH8M13 Data sheet ( Hoja de datos )
| Número de pieza | SH8M13 | |
| Descripción | 4V Drive Nch Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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Data Sheet
4V Drive Nch + Pch MOSFET
SH8M13
Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Dimensions (Unit : mm)
SOP8
(8) (5)
(1) (4)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
SH8M13
Taping
TB
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Tr1 : N-ch Tr2 : P-ch
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
PD *2
Tch
Tstg
30 30
±20 ±20
6.0
7.0
24 28
1.6 1.6
24 28
2.0
1.4
150
55 to 150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle 1%
*2 Mounted on a ceramic board.
Inner circuit
(8)
(7) (6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2 ∗2
∗1 ∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/10
2011.05 - Rev.A
Free Datasheet http://www.datasheet4u.com/
1 page  
SH8M13
1000
100
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
VGS= 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
10
VGS=0V
Pulsed
10
1
Ta=125°C
Ta=75°C
0.1 Ta=25°C
Ta=-25°C
0.01
0
1000
100
0.5 1
SOURCE-DRAIN VOLTAGE : VSD [V]
1.5
Fig.11 Switching Characteristics
Ta=25°C
tf VDD=15V
VGS=10V
td(off)
RG=10W
Pulsed
td(on)
10
1
0.01
tr
0.1 1
DRAIN-CURRENT : ID[A]
10
Data Sheet
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
VDS= 10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.1 1
DRAIN-CURRENT : ID[A]
10
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
100
Ta=25°C
Pulsed
75
ID= 3.0A
ID= 6.0A
50
25
0
0
10
2468
GATE-SOURCE VOLTAGE : VGS[V]
10
Fig.12 Dynamic Input Characteristics
8
6
4
Ta=25°C
VDD= 15V
2 ID= 6.0A
RG=10W
Pulsed
0
0 2 4 6 8 10
TOTAL GATE CHARGE : Qg [nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/10
2011.05 - Rev.A
5 Page 
Notes
Notice
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SH8M13.PDF ] | |
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