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PDF IXFJ40N30 Data sheet ( Hoja de datos )
| Número de pieza | IXFJ40N30 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
IXFJ 40N30
VDSS = 300 V
ID25 = 40 A
RDS(on) = 80 mW
trr < 200 ns
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
Weight
Symbol
V
DSS
VGS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
300 V
300 V
±20 V
±30 V
40 A
160 A
40 A
30 mJ
5 V/ns
300
-55 ... +150
150
-55 ... +150
300
5
W
°C
°C
°C
°C
g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
0
V,
I
D
=
250
mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
V = 0.8 • V
DS DSS
VGS = 0 V
T
J
=
25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
300
2
V
4V
±100 nA
200 mA
1 mA
80 mW
G
D
S
é
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220
designs
• Low R HDMOSTM process
•
DS (on)
Rugged polysilicon
gate
cell
structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• High power, low profile package
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98536 1/99)
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