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PDF AO8807 Data sheet ( Hoja de datos )
| Número de pieza | AO8807 | |
| Descripción | Dual P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO8807
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8807 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch. AO8807
and AO8807L are electrically identical.
- RoHS Compliant
-Halogen Free
Features
VDS (V) = -12V
ID = -6.5 A (VGS = -4.5V)
RDS(ON) < 20mΩ (VGS = -4.5V)
RDS(ON) < 24mΩ (VGS = -2.5V)
RDS(ON) < 30mΩ (VGS = -1.8V)
ESD Protected!
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
Rg
G1
D1
Rg
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-12
±8
-6.5
-5
-60
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient AD
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AO8807
VDC
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
VDC
DUT
Vds
Qgs Qgd
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
Rg
DUT VDC Vdd
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
VDC Vdd
-
-Isd
-Vds
-I F
dI/dt
t rr
-I RM
Charge
90%
10%
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO8807.PDF ] | |
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