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PDF AO8807 Data sheet ( Hoja de datos )
| Número de pieza | AO8807 | |
| Descripción | Dual P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | FreesCale | |
| Logotipo |  |
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AO8807
Dual P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8807 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807
and AO8807L are electrically identical.
- RoHS Compliant
-Halogen Free
Features
VDS (V) = -12V
ID = -6.5 A (VGS = -4.5V)
RDS(ON) < 20mΩ (VGS = -4.5V)
RDS(ON) < 24mΩ (VGS = -2.5V)
RDS(ON) < 30mΩ (VGS = -1.8V)
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
Rg
G1
D1
Rg
G2
D2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-12
±8
-6.5
-5
-60
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient AD
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page  
VDC
Vgs
Ig
Vds
Vgs
Rg
Vgs
AO8807
Dual P-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
VDC
DUT
Vds
Qgs Qgd
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT VDC Vdd
Vgs
td(on) tr
ton
td(off)
tf
toff
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
VDC Vdd
-
-Isd
-Vds
-I F
dI/dt
t rr
-I RM
Vdd
5/5
www.freescale.net.cn
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO8807.PDF ] | |
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