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PDF AON5810 Data sheet ( Hoja de datos )
| Número de pieza | AON5810 | |
| Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AON5810
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON5810 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AON5810 is Pb-free
(meets ROHS & Sony 259 specifications). AON5810L
is a Green Product ordering option. AON5810 and
AON5810L are electrically identical.
Features
VDS (V) = 20V
ID = 7.7 A (VGS = 4.5V)
RDS(ON) < 18 mΩ (VGS = 4.5V)
RDS(ON) < 19 mΩ (VGS = 4.0V)
RDS(ON) < 21 mΩ (VGS = 3.1V)
RDS(ON) < 25 mΩ (VGS = 2.5V)
RDS(ON) < 40 mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
DFN 2X5
S1
S1
G1
S2
S2
G2
D1/D2
Top View
S2
S2
G2
S1
S1
G1
Bottom View
D1
G1
S1
G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current RθJA=75°C/W TA=70°C
Pulsed Drain Current B
Power Dissipation A TA=25°C
RθJA=75°C/W
TA=70°C
Junction and Storage Temperature Range
ID
IDM
PDSM
TJ, TSTG
Maximum
20
±12
7.7
6.1
30
1.6
1.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
61
4.5
Max
40
75
6
D2
S2
Units
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AON5810.PDF ] | |
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