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Número de pieza | AON5802B | |
Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | FreesCale | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON5802B (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! AON5802B
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AON5802B/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with
gate voltages as low as 2.5V while retaining a 12V VGS(MAX)rating. This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain configuration.
AON5802B and AON5802BL are electrically identical.
-RoHs Compliant
-AON5802BL is Halogen Free
Features
VDS (V) = 30V
ID = 7.2A (VGS = 4.5V)
RDS(ON) < 19 mΩ (VGS = 4.5V)
RDS(ON) < 20 mΩ (VGS = 4.0V)
RDS(ON) < 23 mΩ (VGS = 3.1V)
RDS(ON) < 30 mΩ (VGS = 2.5V)
DFN 2X5
S1
S1
G1
S2
S2
G2
D1/D2
Rg
G1
Top View
S2
S2
G2
S1
S1
G1
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Power Dissipation A
TA=25°C
TA=70°C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDSM
TJ, TSTG
D1
1
G2
S1
Maximum
30
±12
7.2
5.6
55
1.6
1.0
-55 to 150
Rg
D2
1
S2
Units
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
30
61
4.5
Max
40
75
6
Units
°C/W
°C/W
°C/W
1/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page AON5802B
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
+
VDC
-
Vgs
Ig
Vds
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
Vdd
VDC
-
Vgs
td(on) tr
ton
td(off) tf
toff
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Test Circuit & Waveforms
DUT
Qrr = - Idt
Vgs
L
Isd I F
trr
dI/dt
+
Vdd
VDC
I RM
- Vds
Vdd
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AON5802B.PDF ] |
Número de pieza | Descripción | Fabricantes |
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AON5802B | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
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