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PDF PTFA092213FL Data sheet ( Hoja de datos )
| Número de pieza | PTFA092213FL | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092213EL and PTFA092213FL are 220-watt, internally-
matched LDMOS FETs designed for use in cellular power amplifier
applications in the 920 to 960 MHz band. These devices feature
internal I/O matching and thermally-enhanced open-cavity ceramic
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092213EL
Package H-33288-6
PTFA092213FL
Package H-34288-4/2
PTFA092213EL
PTFA092213FL
Two-carrier WCDMA Performance
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.84 MHz Bandwidth
40
30
Gain
20
10 Efficiency
0
IMD_lower
-10
-20
-30
30
IMD_upper
ACPR
35 40 45
Output Power (dBm)
-20
-25
-30
-35
-40
-45
-50
-55
50
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 17.5 dB
- Efficiency = 29%
- Intermodulation distortion = –32 dBc
- Adjacent channel power = –42.5 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P1dB = 250 W
- Linear Gain = 17.5 dB
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1850 mA, POUT = 50 W average, ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
— 17.5
— 29
—
—
dB
%
Intermodulation Distortion
IMD
— –32
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2010-11-04
Free Datasheet http://www.datasheet4u.com/
1 page  
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
910
920
930
940
950
960
970
G
S
Z Source W
R jX
1.44
–3.01
1.43
–2.92
1.42
–2.83
1.42
–2.74
1.41
–2.66
1.41
–2.57
1.41
–2.48
Z Load W
R jX
1.57
–2.30
1.56
–2.18
1.55
–2.05
1.54
–1.93
1.53
–1.81
1.52
–1.69
1.51
–1.56
See next page for reference circuit information
PTFA092213EL
PTFA092213FL
Z0 = 50 Ω
Z Load
970 MHz
910 MHz
Z Source
0.1
970 MHz
910 MHz
0.2
0.3
0.4
Data Sheet
5 of 10
Rev. 04, 2010-11-04
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA092213FL.PDF ] | |
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