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Número de pieza | PTFA092211FL | |
Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
Fabricantes | Infineon | |
Logotipo | ||
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Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092211EL and PTFA092211FL are 220-watt, internally-
matched LDMOS FETs intended for EDGE and WCDMA applications
in the 920 to 960 MHz band. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092211EL
Package H-33288-2
PTFA092211FL
Package H-34288-2
PTFA092211EL
PTFA092211FL
Two-carrier WCDMA Performance
VDD = 30 V, IDQ = 1.50 A, ƒ = 940 MHz, 3GPP WCDMA
signal, PAR = 6.5 dB, 5 MHz carrier spacing
40 -20
35 -25
30 -30
25 Efficiency
20
-35
-40
15
ACP
-45
10 -50
40 41 42 43 44 45 46 47 48 49
Output Power, Avg. (dBm)
RF Characteristics
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
940 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 18.0 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
• Typical CW performance, 940 MHz, 30 V
- Output power at P–1dB = 250 W
- Gain = 17.0 dB
- Efficiency = 59%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
• Pb-free, RoHS-compliant and thermally-enhanced
packages
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1750 mA, POUT = 50 W (AVG),
ƒ1 = 937.5 MHz, ƒ2 = 942.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps 17.0 18.0
ηD 28.5 30
IMD — –34
Max
—
—
–32
Unit
dB
%
dBc
All published data at TCASE = 25 °C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02, 2009-05-27
Free Datasheet http://www.datasheet4u.com/
1 page Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
MHz
900
920
940
960
980
Z Source Ω
R jX
1.530
-0.650
1.520
-0.380
1.520
-0.140
1.520
0.090
1.540
0.330
Z Load Ω
R jX
1.480
-0.110
1.430
0.180
1.390
0.470
1.360
0.750
1.360
1.020
PTFA092211EL
PTFA092211FL
Z Source
D
Z Load
G
S
Z0 = 50 Ω
Z Load
980 MHz
900 MHz
Z Source
0.1
Data Sheet
5 of 10
Rev. 02, 2009-05-27
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PTFA092211FL.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTFA092211FL | Thermally-Enhanced High Power RF LDMOS FETs | Infineon |
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