|
|
PDF PTFA092201F Data sheet ( Hoja de datos )
| Número de pieza | PTFA092201F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PTFA092201F (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
PTFA092201E
PTFA092201F
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092201E and PTFA092201F are 220-watt, internally-
matched LDMOS FETs intended for EDGE and WCDMA applications
in the 920 to 960 MHz band. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092201E
Package H-36260-2
PTFA092201F
Package H-37260-2
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
60 -30
50 -35
IMD ACPR
40 -40
30 -45
20 -50
10
0
30
Gain -55
Efficiency
-60
35 40 45 50
Output Power, Avg. (dBm)
RF Characteristics
Features
• Pb-free, RoHS-compliant and thermally-enhanced
packages
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 55 W
- Linear Gain = 18.5 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P–1dB = 250 W
- Gain = 17.5 dB
- Efficiency = 59%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1850 mA, POUT = 55 W average
ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Intermodulation Distortion
IMD
— –37
—
dBc
Gain
Drain Efficiency
Gps
— 18.5
—
dB
ηD
— 30
—
%
All published data at TCASE = 25 °C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.1, 2009-02-20
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 30 V, IDQ = 1850 mA, ƒ1 = 960, ƒ2 = 959 MHz
-20
-30
-40 3rd Order
-50 5th
-60
7th
-70
-80
30
35 40 45 50
Output Power, PEP (dBm)
55
PTFA092201E
PTFA092201F
Intermodulation Distortion vs. Output Power
(high gain tune)
VDD = 30 V, IDQ = 2000 mA, ƒ1 = 859, ƒ2 = 960 MHz
-20
-30
-40 3rd Order
-50 5th
-60
-70 7th
-80
30
35 40 45 50
Output Power, PEP (dBm)
55
Output Power vs. Supply Voltage
IDQ = 1850 mA, ƒ = 960 MHz
55
54
53
52
51
24
26 28 30 32 34
Supply Voltage (V)
36
IS-95 CDMA Performance
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz
40
Adj 750 kHz
30
-40
-50
20 Efficiency
Alt1 1.98 MHz
10
-60
-70
0 -80
25 30 35 40 45 50
Output Power, Avg. (dBm)
Data Sheet
5 of 11
Rev. 03.1, 2009-02-20
5 Page 
PTFA092201E/F V4
Confidential, Limited Internal Distribution
Revision History:
2009-02-20
Previous Version:
2006-06-05, Data Sheet Rev. 02, Product V1
Page
Subjects (major changes since last revision)
all New product version V4, new package diagram and information.
8 Fixed typing error ames for final page. Misc updates.
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2006 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PTFA092201F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTFA092201E | Thermally-Enhanced High Power RF LDMOS FETs | Infineon |
| PTFA092201F | Thermally-Enhanced High Power RF LDMOS FETs | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |