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PDF PTFA091503EL Data sheet ( Hoja de datos )
| Número de pieza | PTFA091503EL | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
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PTFA091503EL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
150 W, 920 – 960 MHz
Description
The PTFA091503EL is a 150-watt, internally-matched FET intended
for use in power amplifier applications in the 920 to 960 MHz band.
This device features internal I/O matching and thermally-enhanced
open cavity ceramic package. Manufactured with Infineon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
Two-carrier WCDMA Performance
VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP
WCDMA signal, PAR = 8 dB, 10 MHz carrier
spacing, 3.84MHz Bandwidth
60 -30
ACPR
50 -35
40
IMD
30
20
-40
Efficiency
-45
-50
10
0
30
Gain
35 40 45
Output Power (dBm)
-55
-60
50
PTFA091503EL
Package H-33288-6
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 32 W
- Linear Gain = 17 dB
- Efficiency = 29%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P1dB = 150 W
- Linear Gain = 17 dB
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
150 W (CW) output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1250 mA, POUT = 32 W average
ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
— 17 — dB
— 29
—
%
Intermodulation Distortion
IMD
— –37
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03, 2010-08-11
Free Datasheet http://www.datasheet4u.com/
1 page  
PTFA091503EL
Confidential, Limited Internal Distribution
Reference Circuit
C804
100000 pF
R803
10 Ohm
R804
1200 Ohm
S3
3
R805
1000 Ohm
C801
100000 pF
C803
100000 pF
S2
8
In
1
Out
4 NC
23
NC
6 75
R801
1300 Ohm
R802
1200 Ohm
S1 2 C
14
BS
3E
C802
100000 pF
C805
100000 pF
VDD
C101
33 pF
TL116 TL104
TL124
3
12
C106
10000 pF
C105
4710000 pF
TL122
3
12
TL121
3
12
R102
5100 Ohm
TL120
3
12
R101
10 Ohm
C108
4.7 pF
TL118
3
12
TL103
TL113
TL117
TL101
TL135
TL114
TL133
R103
10 Ohm
TL128
TL115
C107
10000 pF
TL119
3
12
TL107
e r=3.48
H=20 mil
RO/RO4350B1
RF_IN
TL106 TL109
TL132
C102
TL112 TL108 33 pF
TL131
TL134
TL127 TL125
3
a091503el_bdin _08 -06-2010
12
TL130
TL110
TL102
TL111
Reference circuit input schematic for ƒ = 960 MHz
TL136 TL137
2
3
1
C104
7.5 pF
TL129 TL123
2
3
1
C103
5.1 pF
TL105
TL126
G ATE _DUT
Pin A
e r=3.48
H=20 mil
RO/RO4350B1
DUT
Pin D
DRAIN DUT
Pin C
DUT
Pin D
TL225 1 3
2
TL214
C201
10000000 pF
TL202
TL227
3
12
C211
10000000 pF
TL226
3
12
C203
1000000 pF
C205
10000000 pF
TL201
3
21
TL203 4
1
2
C216
20000 pF
3
C204
10000000 pF
TL204
3
12
C207
TL233 10000000 pF
VDD
TL232
TL218
TL215 TL206
C208
1.5 pF
TL212
TL220
2
13
4
TL211
TL228
TL216
C206
33 pF
TL217
TL223
TL209
TL221
TL207
TL205
TL208
TL222
TL210
RF_OUT
C209
1.5 pF
TL219
TL234
2
TL236 3
1
C202
20000 pF
TL229 TL237
TL235
TL224
2
12
3
12
3
C210
C217
10000000 pF 10000000 pF
21
3
1
C214
C213
1000000 pF 10000000 pF
4
TL231
3 12
3
C212
10000000 pF
TL213
C215
10000000 pF
a 091503el_bdout_ 08-06 -2010
VDD
Reference circuit output schematic for ƒ = 960 MHz
Data Sheet
5 of 11
Rev. 03, 2010-08-11
5 Page 
PTFA091503EL V4
Confidential, Limited Internal Distribution
Revision History:
2010-08-11
Previous Version:
2010-07-26, Data Sheet
Page
Subjects (major changes since last revision)
5-9
Updated reference circuit information
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2010-08-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 03, 2010-08-11
11 Page | ||
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| PDF Descargar | [ Datasheet PTFA091503EL.PDF ] | |
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