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PDF PTFA081501E Data sheet ( Hoja de datos )
| Número de pieza | PTFA081501E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
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PTFA081501E
PTFA081501F
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 864 – 900 MHz
Description
The PTFA081501E and PTFA081501F are thermally-enhanced,
150-watt, internally matched GOLDMOS® FETs intended for ultra-
linear applications. They are characaterized for CDMA and
CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced
packages provide the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTFA081501E
Package H-30248-2
PTFA081501F
Package H-31248-2
IS-95 CDMA Performance
VDD = 28 V, IDQ = 950 mA, ƒ = 900 MHz
50 TCASE = 25°C
TCASE = 90°C
40
Adj 750 kHz
30
-30
-40
-50
20
Efficiency
10
-60
Alt1 1.98 MHz -70
0 -80
32 34 36 38 40 42 44 46 48
Output Power (dBm), Avg.
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical CDMA2000 performance at 900 MHz, 28 V
- Average output power = 35 W
- Linear Gain = 18 dB
- Efficiency = 34%
- Adjacent channel power = –50 dBc
• Typical CW performance, 900 MHz, 28 V
- Output power at P–1dB = 165 W
- Efficiency = 62%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
170 W (CW) output power
RF Characteristics
CDMA2000 3-Carrier Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 28 V, IDQ = 950 mA, POUT = 35 W average, ƒ = 900 MHz
Characteristic
Symbol Min Typ Max Unit
Gain
Gps — 18 — dB
Drain Efficiency
Adjacent Channel Power Ratio
ηD
— 34
—
%
ACPR
— –50
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03, 2007-03-09
FreeDatasheethttp://www.datasheet4u.com/
1 page  
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.56 A
3.10 A
1.02 4.66 A
1.01
1.00
6.22 A
7.76 A
9.32 A
0.99
0.98
10.88 A
12.44 A
14.00 A
0.97
0.96
-20
0 20 40 60 80
Case Temperature (°C)
100
PTFA081501E
PTFA081501F
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
864
873
882
891
900
Z Source Ω
R jX
13.20
4.69
13.30
4.75
13.85
4.94
14.59
5.00
15.01
4.91
Z Load
900 MHz
864 MHz
Z Source
900 MHz
864 MHz
Z Load Ω
R jX
1.35
4.73
1.28
4.80
1.14
4.99
1.06
5.27
1.01
5.43
Z0 = 50 Ω
Data Sheet
5 of 10
Rev. 03, 2007-03-09
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA081501E.PDF ] | |
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