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Número de pieza | PTFA070601E | |
Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTFA070601E (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Thermally-Enhanced High Power RF LDMOS FETs
60 W, 725 – 770 MHz
Description
The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs
designed for cellular power amplifier applications in the 725 to 770
MHz band. Features include input matching and thermally-enhanced
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA070601E
Package H-36265-2
PTFA070601F
Package H-37265-2
PTFA070601E
PTFA070601F
2-Carrier WCDMA Performance
VDD = 28 V, IDQ = 600 m A, ƒ = 760 MHz, 3GPP WCDMA
s ignal, P/A R = 8 dB, 10 MHz carrier spacing
-25 55
50
-30 45
-35 Efficiency
40
35
-40 IM3
-45
30
25
20
-50 15
ACPR
10
-55 5
29 31 33 35 37 39 41 43 45 47
Output Power, avg. (dBm )
Features
• Broadband internal matching
• Typical WCDMA performance, 760 MHz, 28 V
- Average output power = 12 W
- Gain = 19 dB
- Efficiency = 29%
• Typical CW performance, 760 MHz, 28 V
- Output power at P–1dB = 60 W
- Gain = 19 dB
- Efficiency = 72%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 60 W
(CW) output power
• Pb-free and RoHS-compliant
RF Characteristics
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 600 mA, POUT = 12 W AVG, ƒ = 760 MHz
Characteristic
Symbol Min Typ Max Unit
Intermodulation Distortion
IMD
— –37
—
dBc
Gain
Drain Efficiency
Gps — 19 — dB
ηD
— 29
—
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 01, 2009-04-16
Free Datasheet http://www.datasheet4u.com/
1 page Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
700
720
740
760
800
Z Source Ω
R jX
5.32 –4.82
5.07 –4.40
4.84 –3.91
4.69 –3.40
4.55 –2.39
Z Load Ω
R jX
3.14 0.61
3.01 1.02
2.88 1.44
2.79 1.90
2.69 2.82
See next page for circuit information
PTFA070601E
PTFA070601F
Z Load
800 MHz
700 MHz
Z Source
800 MHz
700 MHz
0.1
0. 2
Data Sheet
5 of 10
Rev. 01, 2009-04-16
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PTFA070601E.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTFA070601E | Thermally-Enhanced High Power RF LDMOS FETs | Infineon |
PTFA070601F | Thermally-Enhanced High Power RF LDMOS FETs | Infineon |
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