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PDF PMEG6030ETP Data sheet ( Hoja de datos )
| Número de pieza | PMEG6030ETP | |
| Descripción | Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG6030ETP
High-temperature 60 V, 3 A Schottky barrier rectifier
15 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
• Average forward current: IF(AV) ≤ 3 A
• Reverse voltage: VR ≤ 60 V
• Low forward voltage
• High power capability due to clip-bonding technology
• Small and flat lead SMD plastic package
• AEC-Q101 qualified
• High temperature Tj ≤ 175 °C
1.3 Applications
• Low voltage rectification
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• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF
IF(AV)
Quick reference data
Parameter
forward current
average forward
current
VR reverse voltage
VF forward voltage
IR reverse current
Conditions
Tsp = 160 °C
δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C;
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 165 °C;
square wave
Tj = 25 °C
IF = 3 A; Tj = 25 °C
Tj = 25 °C; VR = 60 V; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
Min Typ Max Unit
- - 4.2 A
[1] - - 3 A
- - 3A
- - 60 V
- 460 530 mV
- 80 200 µA
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NXP Semiconductors
PMEG6030ETP
High-temperature 60 V, 3 A Schottky barrier rectifier
Symbol
IR
Cd
trr
VFRM
Parameter
Conditions
IF = 3 A; Tj = -40 °C
IF = 3 A; Tj = 125 °C
IF = 3 A; Tj = 150 °C
IF = 3 A; Tj = 175 °C
reverse current
VR = 5 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 10 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 60 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 60 V; Tj = -40 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 60 V; Tj = 125 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
peak forward recovery
voltage
I = 1 A; dI /dt = 40 A/µs; T = 25 °CF F
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j
Min Typ Max Unit
- 510 590 mV
- 405 480 mV
- 390 460 mV
- 370 450 mV
- 4 - µA
- 5 - µA
- 80 200 µA
-
0.5 10
µA
- 45 150 mA
- 360 - pF
- 120 - pF
- 12 - ns
- 425 - mV
PMEG6030ETP
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 October 2012
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
11. PMEG6030ETP
Table 8. Revision history
Data sheet ID
Release date
PMEG6030ETP v.1 20121015
PMEG6030ETP
High-temperature 60 V, 3 A Schottky barrier rectifier
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
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PMEG6030ETP
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 October 2012
© NXP B.V. 2012. All rights reserved
11 / 14
datasheet pdf - http://www.DataSheet4U.net/
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PMEG6030ETP.PDF ] | |
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