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Número de pieza | AP50G60W-HF | |
Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP50G60W-HF (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP50G60W-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat),Typ.=2.5V@IC=40A
▼ RoHS Compliant & Halogen-Free
G
C
E
C VCES
IC
TO-3P
G
600V
40A
C
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25oC
IC@TC=100oC
ICM
PD@TC=25oC
TSTG
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Storage Temperature Range
TJ Operating Junction Temperature Range
TL Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Rating
600
+30
75
40
150
277
-55 to 150
150
300
E
Units
V
V
A
A
A
W
oC
oC
oC
Notes:
1.Pulse width limited by max. junction temperature .
http://www.DataSheet4U.net/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
IGES
ICES
VCE(sat)
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
VGE=+30V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=40A
VGE=15V, IC=75A
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
VCE=VGE, IC=1mA
IC=33A
VCE=400V
VGE=15V
VCE=390V,
Ic=33A,
VGE=15V,
RG=5Ω,
Inductive Load
Eoff Turn-Off Switching Loss
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
VGE=0V
VCE=30V
f=1.0MHz
Value
0.45
40
Units
oC/W
oC/W
Min. Typ. Max. Units
- - +100 nA
- - 500 uA
- 2.5 2.9 V
- 3.3 -
V
3 - 7V
- 66 105 nC
- 12 - nC
- 36 - nC
- 15 - ns
- 80 - ns
- 43 - ns
- 160 320 ns
- 1.5 - mJ
- 0.75 - mJ
- 1400 2240 pF
- 160 -
pF
- 20 - pF
Data and specifications subject to change without notice
1
201211301
datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet AP50G60W-HF.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP50G60W-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics |
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