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PDF NTR3A30PZ Data sheet ( Hoja de datos )
| Número de pieza | NTR3A30PZ | |
| Descripción | Single P-Channel Power MOSFET | |
| Fabricantes | ON Semiconductor | |
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NTR3A30PZ
Power MOSFET
−20 V, −2.9 A, Single P−Channel
2.4 x 2.9 x 1.0 mm SOT−23 Package
Features
• Low RDS(on) Solution in 2.4 mm x 2.9 mm Package
• ESD Diode−Protected Gate
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for Portable
Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and
Others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Drain Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−20
±8
−2.9
−2.1
−4.7
0.48
V
V
A
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W
t≤5s
1.25
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
ESD HBM, JESD22−A114
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IDM
TJ,
TSTG
VESD
IS
TL
−8.8
−55 to
150
2000
−0.48
260
A
°C
V
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
260 °C/W
100
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) Max
38 mW @ −4.5 V
50 mW @ −2.5 V
73 mW @ −1.8 V
ID MAX
−2.9 A
P−Channel MOSFET
D3
G
1
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
SOT−23
CASE 318
STYLE 21
TRH M G
G
1
Gate
2
Source
TRH = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTR3A30PZT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 0
1
Publication Order Number:
NTR3A30PZ/D
datasheet pdf - http://www.DataSheet4U.net/
1 page  
1000
50% Duty Cycle
100 20%
10%
5%
10 2%
1%
1
Single Pulse
0.1
0.000001 0.00001 0.0001
NTR3A30PZ
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. FET Thermal Response
1
10 100 1000
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5
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTR3A30PZ.PDF ] | |
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