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PDF MBR40045CT Data sheet ( Hoja de datos )
| Número de pieza | MBR40045CT | |
| Descripción | (MBR40045CT - MBR400100CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR40045CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Naina Semiconductor Ltd.
MBR40045CT thru
MBR400100CTR
Features
Silicon Schottky Diode, 400A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40045CT MBR40060CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
45 60
RMS reverse voltage VRMS
32 42
DC blocking voltage VDC
45 60
Average forward
current
IF(AV)
TC ≤ 125 oC
400
400
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
3000
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3000
MBR40080CT
(R)
80
56
80
400
3000
MBR400100C
T(R)
100
70
100
400
3000
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40045CT
(R)
DC forward voltage
VF
IF = 200 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
5
200
MBR40060CT
(R)
0.68
5
200
MBR40080CT
(R)
0.68
5
200
MBR400100C
T(R)
0.68
5
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR40045CT
(R)
Thermal resistance
junction to case
RthJ-C
0.35
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR40060CT
(R)
0.35
- 40 to +175
MBR40080CT
(R)
0.35
- 40 to +175
MBR400100C
T(R)
0.35
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR40045CT.PDF ] | |
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