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PDF MBR40020CT Data sheet ( Hoja de datos )
| Número de pieza | MBR40020CT | |
| Descripción | (MBR40020CT - MBR40040CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
MBR40020CT thru
MBR40040CTR
Features
Silicon Schottky Diode, 400A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40020CT MBR40030CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
20 30
RMS reverse voltage VRMS
14 21
DC blocking voltage VDC
20 30
Average forward
current
IF(AV)
TC ≤ 125 oC
400
400
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
3000
http://www.DataSheet4U.net/
3000
MBR40035CT
(R)
35
25
35
400
3000
MBR40040CT
(R)
40
28
40
400
3000
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40020CT
(R)
DC forward voltage
VF
IF = 200 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
5
200
MBR40030CT
(R)
0.68
5
200
MBR40035CT
(R)
0.68
5
200
MBR40040CT
(R)
0.68
5
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR40020CT
(R)
Thermal resistance
junction to case
RthJ-C
0.35
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR40030CT
(R)
0.35
- 40 to +175
MBR40035CT
(R)
0.35
- 40 to +175
MBR40040CT
(R)
0.35
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR40020CT.PDF ] | |
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