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PDF AS6C4008 Data sheet ( Hoja de datos )
| Número de pieza | AS6C4008 | |
| Descripción | 512K X 8 BIT LOW POWER CMOS SRAM | |
| Fabricantes | Alliance Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AS6C4008 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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JFaenbuarruya2r0y072007
AS6C4008
512K X 8 BIT LOW51P2KOWXE8RBCITMLOOS WSRPAOMWER CMOS SRAM
FEATURES
Access time : 55 ns
Low power consumption:
Operatingcurrent : 30/20mA (TYP.)
Standby current : 4 µA (TYP.) C-version
Single 2.7V ~ 5.5V power supply
Fully Compatible with all Competitors 5V product
Fully Compatible with all Competitors 3.3V product
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
All products ROHS Compliant
Package 32-pin 450 mil SOP
Coming
Soon!
3322--pp:i:inn86m00mmxil2P0-mDmIP TSOP-I
32-pin 8mm x 13.4mm sTSOP
*36-ball 6mm x 8mm TFBGA
*44-pin 8mm x 20mm TSOP-II
GENERAL DESCRIPTION
The AS6C4008 is a 4,194,304-bit low power
CMOS static random access memory organized as
524,288 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C4008 is well designed for very low power
system applications, and particularly well suited for
battery back-up non-volatile memory application.
T he AS6C4008 operates from a single power
supply of 2.7V ~ 5.5V
.
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A18
DECODER
512Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
CE#
WE#
OE#
CONTROL
CIRCUIT
COLUMN I/O
http://www.DataSheet4U.net/
PIN DESCRIPTION**
SYMBOL
A0 - A18
DQ0 – DQ7
CE#
WE#
OE#
VCC
VSS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
02/FEB/07, v 1.0
Alliance Memory Inc.
Page 1 of 15
datasheet pdf - http://www.DataSheet4U.net/
1 page  
February 2007
®
512K X 8 BIT LOW POWER CMOS SRAM
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
Address
Dout
tRC
Previous Data Valid
tAA
tOH
Data Valid
AS6C4008
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
Address
CE#
OE#
Dout
tRC
tAA
tACE
High-Z
tOLZ
tCLZ
tOE
http://www.DataSheet4U.net/
tOH
tOHZ
tCHZ
Data Valid
High-Z
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low.
3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
02/FEB/07, v 1.0
Alliance Memory Inc.
Page 5 of 15
datasheet pdf - http://www.DataSheet4U.net/
5 Page 
February 2007
®
512K X 8 BIT LOW POWER CMOS SRAM
PACKAGE DIMENSIONS
44-pin 400mil TSOP-Ⅱ Package Outline Dimension
AS6C4008
http://www.DataSheet4U.net/
SYMBOLS
A
A1
A2
b
c
D
E
E1
e
L
ZD
y
Θ
DIMENSIONS IN MILLMETERS
MIN.
NOM.
MAX.
- - 1.20
0.05 0.10 0.15
0.95 1.00 1.05
0.30 - 0.45
0.12 - 0.21
18.212
18.415
18.618
11.506
11.760
12.014
9.957
10.160
10.363
- 0.800 -
0.40 0.50 0.60
- 0.805 -
- - 0.076
0o 3o 6o
DIMENSIONS IN MILS
MIN.
NOM.
MAX.
- - 47.2
2.0 3.9 5.9
37.4 39.4 41.3
11.8 - 17.7
4.7 - 8.3
717 725 733
453 463 473
392 400 408
- 31.5 -
15.7 19.7 23.6
- 31.7 -
- -3
0o 3o 6o
02/FEB/07, v 1.0
Alliance Memory Inc.
Page 11 of 15
datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet AS6C4008.PDF ] | |
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