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PDF SI4134DY Data sheet ( Hoja de datos )
| Número de pieza | SI4134DY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si4134DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω) MAX.
0.0140 at VGS = 10 V
0.0175 at VGS = 4.5 V
ID (A) a
14
12.5
Qg (TYP.)
7.3 nC
SO-8 Single
D
D5
D6
D7
8
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• DC/DC conversion
- Notebook system power
D
4
3G
2S
1S
S
Top View
Ordering Information:
Si4134DY-T1-E3 (lead (Pb)-free)
Si4134DY-T1-GE3 (lead (Pb)-free and halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
IAS
EAS
PD
TJ, Tstg
LIMIT
30
± 20
14
11.2
9.9 b, c
7.9 b, c
50
4.1
2 b, c
15
11.25
5
3.2
2.5 b, c
1.6 b, c
-55 to +150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
SYMBOL
RthJA
RthJF
TYPICAL
38
20
MAXIMUM
50
25
UNIT
°C/W
S15-2154-Rev. D, 07-Sep-15
1
Document Number: 68999
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si4134DY
Vishay Siliconix
16.0
12.8
9.6
6.4
3.2
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating a
150
6.0 2.0
4.8 1.6
3.6 1.2
2.4 0.8
1.2 0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
150
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-2154-Rev. D, 07-Sep-15
5
Document Number: 68999
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4134DY.PDF ] | |
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