PDF SI4122G Data sheet ( Hoja de datos )

Número de pieza	SI4122G
Descripción	(SI4112G - SI4133G) DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS
Fabricantes	Silicon Laboratories
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No Preview Available ! Si4133G Si4123G/22G/13G/12G DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS Features ! Dual-Band RF Synthesizers ! " RF1: 900 MHz to 1.8 GHz ! " RF2: 750 MHz to 1.5 GHz ! ! IF Synthesizer ! " IF: 500 MHz to 1000 MHz ! ! Integrated VCOs, Loop Filters, ! Varactors, and Resonators ! ! Minimal External Components Required Fast Settling Time: 140 µs Low Phase Noise Programmable Power Down Modes 1 µA Standby Current 18 mA Typical Supply Current 2.7 V to 3.6 V Operation Packages: 24-Pin TSSOP and 28-Pin MLP Ordering Information: See page 28. Applications ! GSM, DCS1800, and PCS1900 ! GPRS Data Terminals Cellular Telephones ! HSCSD Data Terminals Description The Si4133G is a monolithic integrated circuit that performs both IF and dual-band RF synthesis for GSM and GPRS wireless communications applications. The Si4133G includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power down settings are programmable through a three-wire serial interface. http://www.DataSheet4U.net/ Functional Block Diagram X IN PW DNB SDATA SCLK SENB AUXOUT R e fe re n ce A m p lifie r Power Down C o n tro l ÷ 65 S e ria l Interface 2 2 -b it D a ta R e g iste r Test Mux Phase D e te cto r ÷N RF1 Phase D e te cto r ÷N RF2 Phase D e te cto r ÷N IF RFLA RFLB RFOUT RFLC RFLD IFO U T IFLA IFLB Pin Assignments Si4133G-BT SCLK SD ATA GNDR RFLD RFLC GNDR RFLB RFLA GNDR GNDR RFOUT VDDR 1 2 3 4 5 6 7 8 9 10 11 12 24 SENB 23 VDDI 22 IFOUT 21 GNDI 20 IFLB 19 IFLA 18 GNDD 17 VDDD 16 GNDD 15 XIN 14 PWDNB 13 AUXOUT Si4133G-BM 28 27 26 25 24 23 22 GNDR 1 21 GNDI RFLD 2 20 IFLB RFLC 3 19 IFLA GNDR 4 18 GNDD RFLB 5 17 VDDD RFLA 6 16 GNDD GNDR 7 8 15 XIN 9 10 11 12 13 14 Rev. 1.1 4/01 Patents pending Copyright © 2001 by Silicon Laboratories Si4133G-DS11 datasheet pdf - http://www.DataSheet4U.net/ 1 page Si4133G Table 3. DC Characteristics (VDD = 2.7 to 3.6 V, TA = –20 to 85°C Parameter Typical Supply Current1 RF1 Mode Supply Current1 RF2 Mode Supply Current1 IF Mode Supply Current1 Symbol Test Condition RF1 and IF Operating Min — — — — Standby Current High Level Input Voltage2 Low Level Input Voltage2 High Level Input Current2 VIH VIL IIH Low Level Input Current2 IIL High Level Output Voltage3 Low Level Output Voltage3 VOH VOL Notes: 1. RF1 = 1.55 GHz, RF2 = 1.2 GHz, IF = 800 MHz 2. For signals SCLK, SDATA, SENB, and PWDNB. 3. For signal AUXOUT. PWDNB = 0 VIH = 3.6 V, VDD = 3.6 V VIL = 0 V, VDD= 3.6 V IOH = –500 µA IOH = 500 µA http://www.DataSheet4U.net/ — 0.7 VDD — –10 –10 VDD–0.4 — Typ 18 13 12 10 1 — — — — — — Max 31 17 17 14 — — 0.3 VDD 10 Unit mA mA mA mA µA V V µA 10 µA —V 0.4 V Rev. 1.1 5 datasheet pdf - http://www.DataSheet4U.net/ 5 Page Si4133G −60 −70 −80 −90 −100 −110 −120 −130 −140 102 103 104 105 Offset Frequency (Hz) Figure 7. Typical RF1 Phase Noise at 1.6 GHz with 200 kHz Phase Detector Update Frequency http://www.DataSheet4U.net/ 106 Figure 8. Typical RF1 Spurious Response at 1.6 GHz with 200 kHz Phase Detector Update Frequency Rev. 1.1 11 datasheet pdf - http://www.DataSheet4U.net/ 11 Page

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Número de pieza	Descripción	Fabricantes
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Si4122-BM	DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS	ETC
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