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PDF Si4122 Data sheet ( Hoja de datos )
| Número de pieza | Si4122 | |
| Descripción | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
| Fabricantes | ETC | |
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Si4133
Si4123/22/13/12
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS
FOR WIRELESS COMMUNICATIONS
Features
! Dual-Band RF Synthesizers !
" RF1: 900 MHz to 1.8 GHz
!
" RF2: 750 MHz to 1.5 GHz
!
! IF Synthesizer
!
" IF: 62.5 MHz to 1000 MHz
!
! Integrated VCOs, Loop Filters, !
Varactors, and Resonators
! Minimal (2) External
Components Required
Low Phase Noise
Programmable Power Down Modes
1 µA Standby Current
18 mA Typical Supply Current
2.7 V to 3.6 V Operation
Packages: 24-Pin TSSOP, 28-Lead
MLP
Applications
! Dual-Band Communications
! Digital Cellular Telephones
GSM, DCS1800, PCS1900
! Digital Cordless Phones
! Analog Cordless Phones
! Wireless LAN and WAN
Description
The Si4133 is a monolithic integrated circuit that performs both IF and dual-
band RF synthesis for wireless communications applications. The Si4133
includes three VCOs, loop filters, reference and VCO dividers, and phase
detectors. Divider and power-down settings are programmable through a
three-wire serial interface.
Functional Block Diagram
X IN
PW DNB
SDATA
SCLK
SENB
AUXOUT
R efe re nc e
A m p lifie r
Power
Down
C o n tro l
Serial
In te rfa c e
22-bit
Data
R eg ister
Test
Mux
÷ R Phase
D e te c to r
RF1
÷N
÷ R Phase
D e te c to r
RF2
÷N
÷ R Phase
D e te c to r
IF
÷N
IF D IV
RFLA
RFLB
RFOUT
RFLC
RFLD
IF O U T
IF L A
IF L B
Ordering Information:
See page 31.
Pin Assignments
Si4133-BT
SCLK
SDA TA
GNDR
RFLD
RFLC
GNDR
RFLB
RFLA
GNDR
GNDR
RFOUT
V DDR
1
2
3
4
5
6
7
8
9
10
11
12
24 SENB
23 V DDI
22 IFOUT
21 GNDI
20 IFLB
19 IFLA
18 GNDD
17 V DDD
16 GNDD
15 XIN
14 PWDNB
13 A UXOUT
Si4133-BM
GNDR
RFL D
RFL C
GNDR
RFL B
RFL A
GNDR
28 27 26 25 24 23 22
1 21
GNDI
2 20 IFLB
3 19 IFLA
4 18 GNDD
5 17 V DDD
6 16 GNDD
7
8
15 XIN
9 10 11 12 13 14
Patents pending
Rev. 1.1 3/01
Copyright © 2001 by Silicon Laboratories
Si4133-DS11
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
1 page  
Si4133
Table 3. DC Characteristics
(VDD = 2.7 to 3.6 V, TA = –40 to 85°C)
Parameter
Total Supply Current1
RF1 Mode Supply Current1
RF2 Mode Supply Current1
IF Mode Supply Current1
Symbol
Test Condition
RF1 and IF operating
Min
—
—
—
—
Standby Current
PWDNB = 0
High Level Input Voltage2
Low Level Input Voltage2
High Level Input Current2
Low Level Input Current2
High Level Output Voltage3
Low Level Output Voltage3
VIH
VIL
IIH VIH = 3.6 V,
VDD = 3.6 V
IIL VIL = 0 V,
VDD= 3.6 V
VOH IOH = –500 µA
VOL IOH = 500 µA
Notes:
1. RF1 = 1.6 GHz, RF2 = 1.1 GHz, IFOUT = 550 MHz, LPWR = 0
2. For signals SCLK, SDATA, SENB, and PWDNB.
3. For signal AUXOUT.
—
0.7 VDD
—
–10
–10
VDD–0.4
—
Typ
18
10
9
8
1
—
—
—
—
—
—
Max
27
16
16
13
—
—
0.3 VDD
10
Unit
mA
mA
mA
mA
µA
V
V
µA
10 µA
—V
0.4 V
Rev. 1.1
5
5 Page 
Si4133
TRACE A: Ch1 FM Main Time
A Marker
1.424
kHz
174.04471 us
Real
160
Hz
/div
711.00 Hz
176
Hz
Start: 0 s
Stop: 399.6003996 us
Figure 6. Typical Transient Response RF1 at 1.6 GHz
with 200 kHz Phase Detector Update Frequency
Rev. 1.1
11
11 Page | ||
| Páginas | Total 34 Páginas | |
| PDF Descargar | [ Datasheet Si4122.PDF ] | |
Hoja de datos destacado
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| Si4122-BT | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | ETC |
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