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PDF PT4410 Data sheet ( Hoja de datos )
| Número de pieza | PT4410 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Jin Yu Semiconductor | |
| Logotipo |  |
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30V N-Channel Enhancement Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@12A = 10.5mΩ
RDS(ON), Vgs@4.5V, Ids@12A = 15mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
Package Dimensions
DD D D
8765
PT4410
12 3 4
SS SG
REF.
http://www.DataSheet4U.net/
A
B
C
D
E
F
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA = 25oC
TA = 75oC
VDS
VGS
ID
IDM
PD
30
± 20
12
48
2.5
1.2
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Avalanche Energy with Single Pulse
EAS
150
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJC
RθJA
25
50
Unit
V
A
W
oC
mJ
oC/W
JinYu
semiconductor
www.htsemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PT4410.PDF ] | |
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