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PDF SI4483ADY Data sheet ( Hoja de datos )
| Número de pieza | SI4483ADY | |
| Descripción | P-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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P-Channel 30 V (D-S) MOSFET
Si4483ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) ()
0.0088 at VGS = - 10 V
0.0153 at VGS = - 4.5 V
ID (A)d
- 19.2
- 14.6
Qg (Typ.)
44.8 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Adaptor Switch
S
G
Top View
Ordering Information: Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
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VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
D
P-Channel MOSFET
Limit
- 30
± 25
- 19.2
- 15.4
- 13.5a, b
- 10.9a, b
- 70
- 4.9
- 2.4a, b
20
20
5.9
3.8
2.9a, b
1.9a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on TC = 25 °C.
t 10 s
Steady State
Document Number: 68982
S10-2543-Rev. B, 08-Nov-10
Symbol
RthJA
RthJF
Typical
33
16
Maximum
42
21
Unit
°C/W
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
22.0
Si4483ADY
Vishay Siliconix
17.6
13.2
8.8
4.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*
150
8.0 2.0
6.4 1.6
4.8 1.2
3.2
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0.8
1.6 0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68982
S10-2543-Rev. B, 08-Nov-10
www.vishay.com
5
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| PDF Descargar | [ Datasheet SI4483ADY.PDF ] | |
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