(PDF) BUV26A Datasheet - SILICON POWER TRANSISTOR

Número de pieza	BUV26A
Descripción	SILICON POWER TRANSISTOR
Fabricantes	Comset Semiconductors
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No Preview Available ! SEMICONDUCTORS BUV26 – BUV26A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value BUV26 BUV26A VCBO Collector-Base Voltage IE = 0 180 200 VCEO Collector-Emitter Voltage IB = 0 90 100 VEBO IC ICM Emitter-Base Voltage Collector Current Collector Peak Current IC = 0 www.DataSheet.net/ tp = 10ms 75 14 25 IB Base Current IBM Base Current tp = 10ms 4 6 Pt Power Dissipation 85 65 Tj Junction Temperature 150 Tstg Storage Temperature range -65 to 150 Limiting values in accordance with the Absolute Maximum System (IEC 134) Unit V V V A A A A W °C THERMAL CHARACTERISTICS Symbol Ratings RthJ-mb From junction to mounting base BUV26 BUV26A Value 1.76 Unit °C/W 29/09/2012 COMSET SEMICONDUCTORS 1\|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page

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PDF BUV26A Data sheet ( Hoja de datos )