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PDF BUV26 Data sheet ( Hoja de datos )

Número de pieza BUV26
Descripción Switchmode Series NPN Silicon Power Transistor
Fabricantes ON Semiconductor 
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No Preview Available ! BUV26 Hoja de datos, Descripción, Manual

BUV26
Switchmode Series NPN
Silicon Power Transistor
Designed for high−speed applications.
Features
Switchmode Power Supplies
High Frequency Converters
Relay Drivers
Driver
Pb−Free Package is Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
www.DataSheet4U.com
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (pw 10 ms)
Base Current − Continuous
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 60°C
Operating and Storage Junction
Temperature Range
VCEO(sus)
VCBO
VEBO
IC
ICM
IB
IBM
PD
PD
TJ, Tstg
90
180
7.0
20
30
4.0
6.0
85
65
− 65 to +150
Vdc
Vdc
Vdc
Adc
Apk
Adc
Adc
W
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.76 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
MARKING
DIAGRAM
TO−220
CASE 221A
STYLE 1
BUV26G
AYWW
1
2
3
BUV26 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUV26
BUV26G
TO−220
TO−220
(Pb−Free)
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
1
Publication Order Number:
BUV26/D

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