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Número de pieza | BUV20 | |
Descripción | 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS | |
Fabricantes | Motorola Inc | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUV20 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUV20/D
BUV20
SWITCHMODE Series
NPN Silicon Power Transistor
50 AMPERES
NPN SILICON
. . . designed for high speed, high current, high power applications.
POWER
METAL TRANSISTOR
• High DC current gain:
125 VOLTS
hFE min = 20 at IC = 25 A
250 WATTS
hFE min = 10 at IC = 50 A
• Low VCE(sat):
VCE(sat) max. = 0.6 V at IC = 25 A
VCE(sat) max. = 1.2 V at IC = 50 A
• Very fast switching times:
TF = 0.25 µs at IC = 50 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emititer Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage (VBE = –1.5 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter voltage (RBE = 100 Ω)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvCollector–Current — Continuous
— Peak (pw 10 ms)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Current continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
Symbol
VCEO(sus)
VCBO
VEBO
VCEX
VCER
IC
ICM
IB
PD
TJ, Tstg
Symbol
θJC
CASE 197A–05
TO–204AE
(TO–3)
Value
125
160
7
160
150
50
60
10
250
– 65 to 200
Max
0.7
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
Watts
_C
Unit
_C/W
1.0
0.8
0.6
0.4
0.2
0
SWITCHMODE is a trademark of Motorola, Inc.
REV 7
40 80 120 160
TC, TEMPERATURE (°C)
Figure 1. Power Derating
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
200
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BUV20.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUV20 | 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS | Motorola Inc |
BUV20 | NPN Silicon Power Transistor | ON Semiconductor |
BUV20 | HIGH CURRENT NPN SILICON TRANSISTOR | STMicroelectronics |
BUV20 | NPN MULTI - EPITAXIAL POWER TRANSISTOR | Seme LAB |
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