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PDF AP9967GM-HF Data sheet ( Hoja de datos )

Número de pieza AP9967GM-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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Advanced Power
Electronics Corp.
AP9967GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
G
SS
S
BVDSS
RDS(ON)
ID
Description
AP9967 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SO-8 package is widely preferred for all commercial-industrial surface
mount applications using infrared reflow technique and suited for voltage
conversion or switch applications.
G
40V
11.5mΩ
11A
D
S
Absolute Maximum Ratings
Symbol
Parameter
www.DataSheet.net/
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
11
8.8
40
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
/W
1
201211051
Datasheet pdf - http://www.DataSheet4U.co.kr/

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